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The latest products and solutions from ROHM Semiconductor.
Featured Products
ROHM's SiC Power and Gate Driver Solutions

ROHM offers new high voltage SiC MOSFETs in packages with separate source connectors for the Driver and the Output sides in order to reduce switching losses. Additionally, ROHM offers proprietary galvanic isolated gate drivers with critical integrated features such as Miller Clamps and designed to drive SiC MOSFETs. ROHM offers ideal solutions for emerging applications requiring high voltage, high efficiency and high reliability such as Electric Vehicles, Solar Power and driving large Industrial Motors.
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BD71850MWV
Programmable PMIC



BD71850MWV is a programmable Power Management IC (PMIC) that powers single-core, dual-core, and quad-core SoCs, such as the NXP i.MX 8M Nano. Designed in a compact footprint, the device is optimized to lower BOM costs. It integrates 6 buck regulators and 6 LDOs to provide all the power rails required by the SoC and commonly used peripherals.

BD800Mxx
Low-Iq Wide-Vin AECQ LDOs


ROHM’s new BD800Mxx is part of a wide lineup of general purpose, 3-pin regulators featuring low power consumption, high-current capability, and high voltage resistance. The BD800Mxx is adjustable, making it ideal for automotive systems, consumer electronics, and commercial/industrial equipment.




AECQ 3.75kV Gate Drivers


ROHM’s proprietary microfabrication and coreless transformer
technologies were used to develop on-chip transformer processes for compact, isolated gate drivers. 


BM14270AMUV-LB
Coreless Non-Contact Current Sensor


BM14270AMUV-LB is a coreless non-contact current sensor that uses an MI sensor for magnetic detection. Because the device can operate without contact,  it can measure the current line without losses.

GMR Series Shunt Resistors

ROHM offers
the GMR series of high-power shunt resistors (3W to 10W) for current sensing. The shunt resistors offer low resistance (starting at 10mΩ), excellent TCR characteristics, and high heat dissipation—resulting in superior reliability. A revised electrode structure combined with the optimized device design improves heat dissipation. In addition, the GMR series reduces mounting area by 39% over conventional 4W rated products and can sustain against overcurrent loads to deliver stable current detection accuracy, even when unexpected loads exceeding the rated power are applied.

18 Different Full SiC Modules

ROHM has integrated SiC MOSFETs and SBDs into full-SiC power modules. Compared to conventional IGBT modules, these SiC modules significantly reduce switching losses, making high-frequency operation above 100 kHz possible. This improves efficiency in industrial equipment, such as high-frequency power supplies for induction heating and hybrid-power storage systems.

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